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SMUN5315DW1T1G

Part No SMUN5315DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr onsemi
Package Tape & Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 187mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number SMUN5315
Other Names 2156-SMUN5315DW1T1G-OS,SMUN5315DW1T1GOSCT,ONSONSSMUN5315DW1T1G,SMUN5315DW1T1G,SMUN5315DW1T1GOSTR,SMUN5315DW1T1GOSDKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278734-SMUN5315DW1T1G
Ultra Librarian 3D Model Ultra Librarian SMUN5315DW1T1G CAD Model

Description

ON Semiconductor SMUN5315DW1T1G Overview

The SMUN5315DW1T1G from ON Semiconductor is a high-performance, dual N-Channel MOSFET designed for a variety of applications that demand efficient power management and high reliability. This semiconductor device is engineered to deliver optimal performance with low on-resistance and minimal gate charge, making it an ideal choice for power switching and amplification applications.

Key Features

  • Low On-Resistance: With a very low R<sub>DS(on), this MOSFET ensures efficient power handling and reduced energy loss during operation.
  • Dual N-Channel Configuration: The dual N-Channel design allows for compact circuit designs and can be used in applications requiring matched pair transistors.
  • High Power and Current Handling: The device is capable of handling high levels of power and current, making it suitable for demanding applications.
  • High-Speed Switching: The MOSFET's fast switching speed is advantageous for high-frequency applications, contributing to better performance and energy efficiency.
  • SOT-363 Package: The small surface-mount SOT-363 package is designed for space-saving PCB layouts and is suitable for automated assembly processes.
  • Pb-Free and RoHS Compliant: Adhering to environmental standards, the SMUN5315DW1T1G is lead-free and RoHS compliant, making it an eco-friendly choice for manufacturers.

Applications

The versatility of the SMUN5315DW1T1G makes it suitable for a wide range of applications, including:

  • Power management in portable and battery-powered devices
  • DC/DC converters and power supply circuits
  • Motor control circuits
  • Switching regulators
  • Load/relay drivers

Technical Specifications

The SMUN5315DW1T1G boasts impressive technical specifications:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 3.0A
  • Power Dissipation (P<sub>D): 1.25W
  • Gate-Source Voltage (V<sub>GS): ±8V

With its robust design and high efficiency, the SMUN5315DW1T1G from ON Semiconductor is a reliable and cost-effective solution for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,575+ $0.0367 $57.8025
3,835+ $0.0302 $115.8170
5,930+ $0.0293 $173.7490
8,165+ $0.0283 $231.0695
10,550+ $0.0274 $289.0700
14,155+ $0.0245 $346.7975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 1575 pcs
Order Increment : 1 pcs
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