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SNRVUD620CTT4G

Part No SNRVUD620CTT4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 200V 3A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features Diode Array 1 Pair Common Cathode Standard 200 V 3A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, SWITCHMODE™
Package Reel - TR
Speed Fast Recovery =< 500ns, > 200mA (Io)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK
Family Name SNRVUD620
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number SNRVUD620CTT4GOSCT-ND, SRVUD620CTT4G-ND, 488-SNRVUD620CTT4GCT, SRVUD620CTT4G, SNRVUD620CTT4GOSDKR, 488-SNRVUD620CTT4GTR, SNRVUD620CTT4GOSTR, SNRVUD620CTT4GOSDKR-ND, SNRVUD620CTT4GOSTR-ND, SNRVUD620CTT4GOSCT, 488-SNRVUD620CTT4GDKR
Quantity per package 2500
Popularity High
Supply and Demand Status Balance
Win Source Part Number 896872-SNRVUD620CTT4G
Ultra Librarian 3D Model Ultra Librarian SNRVUD620CTT4G CAD Model

Description

The SNRVUD620CTT4G is a high-performance, dual N-channel MOSFET designed by ON Semiconductor, a leader in semiconductor solutions. This power MOSFET is engineered to deliver efficient power management and conversion for a wide range of applications, including computing, networking, and industrial systems. The device is characterized by its low on-resistance and high switching speed, making it an excellent choice for high-efficiency power supplies and motor control circuits.

Key Features

  • Low On-Resistance: The SNRVUD620CTT4G boasts an exceptionally low on-resistance, which minimizes conduction losses and enhances overall efficiency in power applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET can handle high-frequency operations with ease, reducing switching losses and improving performance in power conversion systems.
  • Dual N-Channel Configuration: The dual N-channel setup allows for compact circuit designs by integrating two MOSFETs in one package, saving space and simplifying the layout.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure reliable operation even under high power and temperature conditions.
  • Low Gate Charge: A low gate charge reduces the power required to switch the MOSFET, further improving the energy efficiency of the system.

Applications

The SNRVUD620CTT4G is versatile and can be used in various applications, such as:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives and Controllers
  • Computing and Server Power Supplies
  • Networking Equipment

Product Specifications

The SNRVUD620CTT4G is offered in a compact, surface-mount package and is designed to meet the rigorous demands of modern electronic circuits. Some of the key specifications include:

  • Package: DPAK (TO-252)
  • Drain-to-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 6.2A
  • Power Dissipation: 1.56W
  • Operating Temperature Range: -55°C to +150°C

With its combination of performance and reliability, the SNRVUD620CTT4G from ON Semiconductor is an ideal choice for designers looking to enhance the efficiency and robustness of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.7858 $50.1444
44+ $2.2858 $100.5752
68+ $2.2143 $150.5724
94+ $2.1429 $201.4326
121+ $2.0715 $250.6515
162+ $1.8572 $300.8664
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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