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STD110N02RT4G-VF01

Part No STD110N02RT4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 32A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 3440pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102842-STD110N02RT4G-VF01
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD110N02RT4G-VF01 CAD Model

Description

ON Semiconductor STD110N02RT4G-VF01 Overview

The STD110N02RT4G-VF01 is a high-performance, N-channel Power MOSFET designed by ON Semiconductor, a leading company in energy-efficient innovations. This power MOSFET is a testament to ON Semiconductor's commitment to providing advanced technology for a wide range of power applications. It is specifically engineered to meet the rigorous demands of modern electronic circuits, offering a balanced combination of fast switching, low on-resistance, and cost-effectiveness.

Key Features

  • Advanced Technology: Utilizing trench gate and advanced layout designs, the STD110N02RT4G-VF01 provides excellent RDS(on) and gate charge characteristics, which are crucial for efficient power management.
  • High Current Capability: This MOSFET can handle continuous drain currents up to 110 A, making it suitable for high-power applications.
  • Low RDS(on): With a typical on-resistance of just 2.1 mOhms, the device ensures minimal power loss and heat generation, enhancing overall system reliability.
  • Fast Switching Speed: The device's fast switching capability improves performance in applications where switching losses are critical.
  • Robust Thermal Performance: The STD110N02RT4G-VF01 is designed to operate within a wide temperature range, ensuring reliability under varying environmental conditions.

Applications

The versatility of the STD110N02RT4G-VF01 makes it an ideal choice for a variety of applications, including:

  • DC/DC converters
  • Power management in computing and consumer electronics
  • Motor drives and controllers
  • Switching regulators
  • Load switches

Package and Quality

The STD110N02RT4G-VF01 is offered in a compact DPAK package, which is not only space-saving but also allows for efficient heat dissipation. ON Semiconductor's commitment to quality is evident in the rigorous testing and quality control measures applied to this MOSFET, ensuring that it meets the highest industry standards for performance and reliability.

With its exceptional features and reliable performance, the STD110N02RT4G-VF01 from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and durability of their power management systems.

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