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STD5407NT4G

Part No STD5407NT4G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 40V 7.6A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 7.6A, 38A
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1000pF at 32V
Power Dissipation (Maximum) 2.9W, 75W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1260867-STD5407NT4G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD5407NT4G CAD Model

Description

ON Semiconductor STD5407NT4G – Power MOSFET

The ON Semiconductor STD5407NT4G is a high-performance Power MOSFET designed to meet the rigorous demands of power regulation in a wide array of electronic applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient, robust, and reliable power management solutions that cater to a diverse market sector.

With its compact and durable design, the STD5407NT4G offers an optimal power density, making it suitable for space-constrained applications. It features a low on-resistance (R<sub>DS(on)) which ensures minimal power loss during operation, thereby enhancing the overall efficiency of the system it is integrated into. This characteristic is particularly beneficial for applications such as DC-DC converters, power supplies, and motor drives where efficiency is of paramount importance.

The STD5407NT4G is characterized by a maximum continuous drain current (I<sub>D) of 4 A, allowing it to handle moderate current loads with ease. The device operates at a maximum voltage of 30 V, which makes it versatile for use in various low to medium voltage applications. Additionally, this MOSFET is capable of withstanding high pulse currents, which is crucial for applications that experience transient conditions.

ON Semiconductor has engineered the STD5407NT4G with advanced trench technology to ensure that the device exhibits fast switching performance. The fast switching capability not only improves the response time of the power circuit but also reduces the switching losses, contributing to the overall system efficiency. Furthermore, the device is designed with a robust body diode that can manage the reverse recovery process effectively, which is essential for applications involving inductive loads.

The STD5407NT4G comes in a surface-mount DPAK (TO-252) package, which is widely accepted in the industry for its ease of integration into printed circuit boards (PCBs). The package is designed to provide excellent thermal performance, ensuring that the device operates within its specified temperature range even under high power conditions.

In summary, the ON Semiconductor STD5407NT4G is a versatile and efficient Power MOSFET that is engineered to deliver high performance, reliability, and energy savings for a broad spectrum of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3545 $51.4025
345+ $0.2909 $100.3605
535+ $0.2818 $150.7630
735+ $0.2727 $200.4345
950+ $0.2637 $250.5150
1,270+ $0.2364 $300.2280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,750 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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