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SVD5806NT4G

Part No SVD5806NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1084111-SVD5806NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SVD5806NT4G CAD Model

Description

The SVD5806NT4G is a cutting-edge, high-performance MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management solutions. This device is designed to cater to a wide range of applications, including power supply circuits, motor control units, and high-efficiency converters, making it a versatile component for modern electronic systems.

Key Features

  • Low R<sub>DS(on): The SVD5806NT4G boasts an ultra-low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power applications.
  • High Current Capability: With its ability to handle high currents, this MOSFET is suitable for applications that demand robust performance under heavy load conditions.
  • Fast Switching Speed: The fast switching capabilities of the SVD5806NT4G make it an excellent choice for high-frequency applications, ensuring minimal switching losses and better performance.
  • Robust Thermal Performance: The device is encapsulated in a compact package that provides excellent thermal performance, ensuring reliability and longevity even under high temperature operating conditions.

Applications

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Switch Mode Power Supplies (SMPS)
  • LED Lighting

Specifications

Parameter Value Package TO-252 (DPAK) Drain-to-Source Voltage (V<sub>DSS) 60V Continuous Drain Current (I<sub>D) 80A R<sub>DS(on) Max @ V<sub>GS = 10V 3.3mΩ Power Dissipation (P<sub>D) 48W

With its robust design and superior electrical characteristics, the SVD5806NT4G from ON Semiconductor is an ideal choice for engineers and designers looking to enhance the efficiency and reliability of their power management systems. Its compact footprint and high-performance metrics make it a go-to MOSFET for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6418 $58.2090
11+ $9.5523 $105.0753
17+ $9.2538 $157.3146
23+ $8.9553 $205.9719
29+ $8.6568 $251.0472
39+ $7.7612 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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