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Same model may have multiple batches, images only for reference.
2SA11230RA Real Image
Same model may have multiple batches, images only for reference.

2SA11230RA

Part No 2SA11230RA
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PNP 150V 0.05A TO92-B1  /  Bipolar (BJT) Transistor PNP 150 V 50 mA 200MHz 750 mW Through Hole TO-92-B1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Panasonic Electronic Components
Package Cut Tape (CT),Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 1V @ 3mA, 30mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 10mA, 5V
Power - Max 750 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-B1
Base Product Number 2SA1123
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2SA11230RACT,2SA11230RATB,2SACT11230RACT
Standard Package 3,000
Win Source Part Number 1036506-2SA11230RA
Ultra Librarian 3D Model Ultra Librarian 2SA11230RA CAD Model

Description

The Panasonic Electronic Components 2SA11230RA is a PNP transistor that can handle a maximum power of 750mW.

  • Voltage collector emitter breakdown: 150V
  • Maximum current collector: 50mA
  • Vce saturation: 1V
  • DC current gain: 130 @ 10mA, 5V
  • Frequency transition: 200MHz
  • Package: TO-92-3 (TO-226AA) formed leads
  • Packaging: cut tape (CT) and tape & box (TB)
  • Standard package: 3,000 pieces
  • MSL level: 1 (Unlimited)
  • ECCN: EAR99

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