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Same model may have multiple batches, images only for reference.
UNR51A6G0L Real Image
Same model may have multiple batches, images only for reference.

UNR51A6G0L

Part No UNR51A6G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 150MW SMINI3
Datasheet
UNR51A6G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 1116452-UNR51A6G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR51A6G0L CAD Model

Description

The Panasonic Electronic Components UNR51A6G0L is a PNP pre-biased transistor with a maximum current collector of 80mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Maximum Current Collector: 80mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 160 @ 5mA, 10V
  • Maximum Power Dissipation: 150mW
  • Frequency Transition: 80MHz
  • Package/Case: SMini3-F2
  • Status: Obsolete (EOL)

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