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UNR5212G0L Real Image1 UNR5212G0L Real Image2
Same model may have multiple batches, images only for reference.
UNR5212G0L Real Image1 UNR5212G0L Real Image2
UNR5212G0L Real Image1 UNR5212G0L Real Image2
Same model may have multiple batches, images only for reference.

UNR5212G0L

Part No UNR5212G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 150 mW Surface Mount SMini3-F2
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors
Mfr Panasonic
Series -
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 150 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SC-85
Supplier Device Package SMini3-F2
Base Product Number UNR5212
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000 pcs
Win Source Part Number 1383793-UNR5212G0L
Ultra Librarian 3D Model Ultra Librarian UNR5212G0L CAD Model

Description

The UNR5212G0L is a pre-biased NPN bipolar transistor from Panasonic.

  • Application: General-purpose amplification and switching
  • Maximum Power Rating: 150 mW
  • Collector-Emitter Breakdown Voltage: 50 V
  • Maximum Collector Current: 100 mA
  • Vce Saturation: 250 mV @ 300 µA base current and 10 mA collector current
  • Collector Cutoff Current: 500 nA
  • Frequency Range: Up to 150 MHz
  • Mounting Type: Surface Mountable
  • Package: SC-85
  • Moisture Sensitivity Level: 1 (MSL 1)
  • Status: Obsolete

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