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Same model may have multiple batches, images only for reference.
UNR521300L Panasonic
Same model may have multiple batches, images only for reference.

UNR521300L

Part No UNR521300L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR521300L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-G1
Win Source Part Number 115151-UNR521300L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR521300L CAD Model

Description

The Panasonic Electronic Components UNR521300L is an NPN pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V, a collector cut-off current of 500nA, and a maximum power dissipation of 150mW.

  • Typical gain: 80 @ 5mA and 10V
  • Ideal for: use in discrete semiconductor products
  • Case: SMini3-G1
  • Mounting: SMD (SMT) technology
  • Transition frequency: 150MHz
  • Base resistor (R1): 47k ohms
  • Emitter-base resistor (R2): 47k ohms
  • Maximum current collector: 100mA
  • Maximum voltage collector-emitter saturation: 250mV @ 300μA and 10mA

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4,550+ $0.0508 $231.1400
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