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Same model may have multiple batches, images only for reference.
UNR521MG0L Real Image
Same model may have multiple batches, images only for reference.

UNR521MG0L

Part No UNR521MG0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR521MG0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 036080-UNR521MG0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR521MG0L CAD Model

Description

The Panasonic Electronic Components UNR521MG0L transistor is a pre-biased NPN transistor with a maximum collector-emitter breakdown voltage of 50V.

  • Maximum current collector: 100mA
  • Collector cut-off current: 500nA
  • Typical gain (hFE) (Min): 80 @ 5mA, 10V
  • Frequency transition: 150MHz
  • Maximum power dissipation: 150mW
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Package: SMini3-F2
  • Mounting: SMD (SMT) technology
  • Resistor - base (R1) (Ohms): 2.2k
  • Resistor - emitter base (R2) (Ohms): 47k
  • Product Category: Discrete Semiconductor Product
  • Status: obsolete (EOL) in the open market
  • Supply and demand status: balanced

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