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Same model may have multiple batches, images only for reference.
UNR52AFG0L Panasonic
Same model may have multiple batches, images only for reference.

UNR52AFG0L

Part No UNR52AFG0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR52AFG0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 036083-UNR52AFG0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR52AFG0L CAD Model

Description

The Panasonic Electronic Components NPN transistor is a high-quality component that provides reliable performance.

  • Frequency Transition: 150MHz
  • Maximum Current Collector: 80mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Mounting: The transistor is mounted using SMD (SMT) technology and is part of the discrete semiconductor products category.
  • Lifecycle Status: This product is now obsolete (EOL)
  • Case/Package: SMini3-F2
  • Typical Gain (hFE) (Min): 30 @ 5mA, 10V
  • Maximum Power Dissipation: 150mW
  • Supply and Demand Status: balance

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