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Same model may have multiple batches, images only for reference.
UNR9110J0L Panasonic
Same model may have multiple batches, images only for reference.

UNR9110J0L

Part No UNR9110J0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 125MW SSMINI3
Datasheet
UNR9110J0L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini3-F1
Win Source Part Number 053337-UNR9110J0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR9110J0L CAD Model

Description

Panasonic Electronic Components' 053337-UNR9110J0L is a discrete semiconductor product that is obsolete (EOL).

  • Supply and Demand Status: This product has a balanced supply and demand status.
  • Packaging: It is packaged on a reel - TR and mounted on SMD (SMT).
  • Transition Frequency: The transition frequency of this product is 80MHz
  • Transistor Polarity: it has a PNP - Pre-Biased transistor polarity.
  • Base Resistor (R1): 47k
  • Emitter Base Resistor (R2): is not specified.
  • Category: This component is categorized under Discrete Semiconductor Products and is housed in SSMini3-F1.
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 160 @ 5mA, 10V
  • Maximum Power Dissipation: 125mW

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