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UNR91A6G0L

Part No UNR91A6G0L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 125MW SSMINI3  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 80 MHz 125 mW Surface Mount SSMini3-F3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 80 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 80 MHz
Power - Max 125 mW
Mounting SMD (SMT)
Package / Case SC-89, SOT-490
Supplier Device Package SSMini3-F3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names UNR91A6G0LTR,UNR91A6G0LDKR,UNR91A6G0LCT
Standard Package 3,000
Win Source Part Number 1102380-UNR91A6G0L
Ultra Librarian 3D Model Ultra Librarian UNR91A6G0L CAD Model

Description

The Panasonic Electronic Components UNR91A6G0L is a PNP pre-biased transistor that has a maximum power of 125mW and a maximum collector-emitter breakdown voltage of 50V. The supply and demand status of this product is currently in shortage. This transistor is suitable for use in low-power amplifier and switching circuits.

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Shipping Information

Shipped from HK warehouse
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