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Same model may have multiple batches, images only for reference.
XN1114-(TX) Real Image
Same model may have multiple batches, images only for reference.

XN1114-(TX)

Part No XN1114-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP MINI5
Datasheet
XN1114-(TX) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package Mini5-G1
Win Source Part Number 214565-XN1114-(TX)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XN1114-(TX) CAD Model

Description

The Panasonic Electronic Components 214565-XN1114-(TX) is an obsolete (EOL) Mini5-G1 SMD (SMT) transistor with a transition frequency of 80MHz.

  • Status: Obsolete (EOL)
  • Package: Mini5-G1 SMD (SMT)
  • Transition Frequency: 80MHz
  • Type: pre-biased (dual) 2 PNP transistor
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 80 @ 5mA and 10V
  • Maximum Power Dissipation: 300mW
  • Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 250mV @ 300μA and 10mA
  • Supply and Demand: Balanced

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