The Panjit International Inc. MMBT4401_R1_00001 is an NPN bipolar transistor that can handle a maximum power of 225 mW.

• Collector-Emitter Breakdown Voltage: 40 V
• Maximum Collector Current: 600 mA
• Vce Saturation: 750 mV @ 50 mA and 500 mA
• Maximum Collector Cutoff Current: 100 nA
• DC Current Gain: 100 @ 150 mA and 1 V
• Transition Frequency: 250 MHz
• Package: TO-236-3, SC-59, SOT-23-3
• Operating Temperature Range: -55°C to 150°C (TJ)
• Category: Discrete semiconductor products such as transistors - bipolar (BJT) - single