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Same model may have multiple batches, images only for reference.
MMBT5551_R1_00001 Panjit
Same model may have multiple batches, images only for reference.

MMBT5551_R1_00001

Part No MMBT5551_R1_00001
Manufacturer Panjit
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A SOT23
Datasheet
MMBT5551_R1_00001 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Panjit International Inc.
Series -
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 250 mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Base Product Number MMBT5551
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377022-MMBT5551_R1_00001
Ultra Librarian 3D Model Ultra Librarian MMBT5551_R1_00001 CAD Model

Description

The Panjit International Inc. MMBT5551_R1_00001 bipolar transistor is a versatile and high-performance component for various electronic circuits. It is a surface-mount transistor with a compact SOT-23 package, making it suitable for space-constrained applications.

  • Transistor Type: NPN
  • Maximum Collector Current: 600mA
  • Maximum Collector-Emitter Breakdown Voltage: 160V
  • Minimum DC Current Gain: 80 @ 10mA and 5V
  • Vce Saturation: 200mV @ 5mA and 50mA
  • Operating Temperature: -55°C to 150°C
  • Status: Active product with high availability

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Quantity Unit Price Ext. Price
2,050+ $0.0244 $50.0200
4,390+ $0.0228 $100.0920
6,790+ $0.0221 $150.0590
9,760+ $0.0205 $200.0800
12,695+ $0.0197 $250.0915
15,790+ $0.0190 $300.0100
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