The PJD5NA80_L2 is an 800V N-Channel MOSFET from Panjit Semiconductor. It is designed for high-voltage, high-speed switching applications. This MOSFET offers a robust performance and is suitable for use in a variety of power electronics circuits.

Applications

• Power factor correction (PFC) circuits
• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• High-voltage DC-DC converters
• Lighting applications (e.g., LED drivers)

Features

• High voltage rating (800V)
• Low on-resistance (RDS(on)) for reduced power losses
• Fast switching speed
• High avalanche ruggedness
• Lead-free and RoHS compliant
• Optimized gate charge (Qg)

Benefits

• Improved energy efficiency due to low RDS(on)
• Enhanced system reliability with high voltage rating and avalanche capability
• Simplified thermal management due to reduced power dissipation
• Reduced component count and board space due to integrated features
• Compliance with environmental regulations

Specifications

The PJD5NA80_L2 has a drain-source voltage (VDS) of 800V and a continuous drain current (ID) of up to 5A. The on-resistance (RDS(on)) is typically around 1.8 Ohms at a gate-source voltage (VGS) of 10V. The gate charge (Qg) is typically around 12nC. The device is available in a TO-252 package.

This MOSFET is suitable for applications requiring efficient and reliable high-voltage switching. Its robust design and optimized parameters contribute to stable performance and long operational life in demanding environments.