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PJD7NA60_L1

Part No PJD7NA60_L1
Manufacturer Panjit
Catalog OEM Parts (O - R)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1085256-PJD7NA60_L1
Categories OEM Parts(O-R)
Manufacturer Panjit
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PJD7NA60_L1 CAD Model

Description

The PJD7NA60_L1 is a 600V N-Channel MOSFET from Panjit, designed for high-efficiency power switching applications. This MOSFET utilizes advanced trench technology to achieve low on-resistance (RDS(on)) and gate charge, minimizing conduction and switching losses. The device is available in a TO-252 package, suitable for surface mounting and efficient heat dissipation.

Applications:

  • Power Factor Correction (PFC) circuits
  • Switch-Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • DC-DC converters
  • Motor control circuits

Features:

  • High Voltage: 600V Drain-Source Voltage (VDS)
  • Low On-Resistance: Reduces conduction losses, improving efficiency.
  • Fast Switching Speed: Minimizes switching losses.
  • Low Gate Charge: Reduces drive power requirements.
  • Avalanche Ruggedness: High avalanche energy capability for enhanced reliability.
  • TO-252 Package: Suitable for surface mount assembly.

Benefits:

  • Improved Efficiency: Lower RDS(on) and gate charge contribute to higher power conversion efficiency.
  • Reduced Heat Dissipation: Lower losses minimize heat generation, simplifying thermal management.
  • Increased Reliability: Avalanche ruggedness ensures robustness in demanding applications.
  • Simplified Design: Low gate charge simplifies gate drive circuitry.
  • Compact Footprint: TO-252 package enables compact designs.

Additional Details:

The PJD7NA60_L1 boasts a typical RDS(on) value that ensures efficient power delivery, minimizing energy waste. Its fast switching speed further reduces power losses during switching transitions, optimizing overall system performance. This MOSFET is designed to withstand high avalanche energy, providing enhanced reliability in applications where inductive loads are present. The TO-252 package offers excellent thermal performance, allowing for efficient heat dissipation and ensuring stable operation even at high power levels.

The device is RoHS compliant, meeting environmental standards for hazardous substances. Its robust design and high-performance characteristics make it an excellent choice for a wide range of power electronic applications.

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