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Same model may have multiple batches, images only for reference.
PJD80N03_L2_00001 Panjit
Same model may have multiple batches, images only for reference.

PJD80N03_L2_00001

Part No PJD80N03_L2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1323 pF @ 25 V
Power Dissipation (Max) 2W (Ta), 55W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315541-PJD80N03_L2_00001
Ultra Librarian 3D Model Ultra Librarian PJD80N03_L2_00001 CAD Model

Description

The PJD80N03_L2_00001 is an N-Channel MOSFET from Panjit International Inc.

  • Package: TO-252-3, DPak
  • Drain to Source Voltage: 30 V (Max)
  • Continuous Drain Current: 15 A @ 25°C
  • Rds(on): 6 mOhm @ 20 A
  • Gate Charge: 12 nC @ 4.5 V
  • Input Capacitance: 1323 pF @ 25 V
  • Operating Temperature: -55°C to 150°C

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