UF4SC120023K4S

Part No UF4SC120023K4S
Manufacturer Qorvo US Inc.
Catalog FETs - Single
Description 1200V/23MOHM SIC STACKED FAST CA
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202193-UF4SC120023K4S
Manufacturer Qorvo
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 385W (Tc)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

The Qorvo 1202193 is a high-performance N-Channel SiCFET (Cascode SiCJFET) transistor. It is designed for applications requiring high drain to source voltage (Vdss) of 1200 V and power dissipation of up to 385W (Tc). The device is housed in a TO-247-4 package, making it suitable for through-hole mounting. With its advanced SiC technology, this transistor offers excellent performance and reliability in various electronic circuits. It is commonly used in power supplies, motor control, and high voltage applications. The Qorvo 1202193 is an active product, readily available for use in your electronic designs.

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