The Ramtron FM25H20-PGTR is a high-performance, low-power Serial Ferroelectric Random Access Memory (F-RAM) device. F-RAM combines the best attributes of RAM and ROM, providing nonvolatile data storage with the fast write speeds of RAM. This memory device is ideal for applications requiring frequent or rapid data logging, buffering, or storage.

Applications

• Industrial control systems
• Smart meters
• Medical devices
• Automotive data recorders
• Point-of-sale (POS) terminals
• Data logging in harsh environments
• Gaming machines

Features

• 2 Mbit (262,144 x 8) nonvolatile memory: Provides ample storage for critical data.
• High endurance: Supports 10¹⁴ (100 trillion) read/write cycles, ensuring long-term data integrity.
• Fast write capability: NoDelay™ writes eliminate write delays, enabling real-time data capture.
• Low power consumption: Reduces overall system power requirements, extending battery life in portable applications.
• Serial Peripheral Interface (SPI): Simplifies interfacing with microcontrollers and other digital devices.
• Operating voltage: 2.0V to 3.6V
• Operating temperature range: -40°C to +85°C
• RoHS compliant: Meets environmental standards for hazardous substance reduction.

Benefits

• Reliable data storage: Nonvolatile memory retains data even when power is lost.
• Fast data logging: NoDelay™ writes enable real-time data capture without performance bottlenecks.
• Extended product life: High endurance ensures long-term reliability in demanding applications.
• Lower system power consumption: Reduces energy costs and extends battery life in portable devices.
• Simplified system design: SPI interface simplifies integration with microcontrollers and other digital systems.
• Wide operating voltage range: Provides flexibility in power supply design.

Additional Details

The FM25H20-PGTR operates using the SPI protocol, supporting modes 0 and 3. It features a page write mode, allowing up to 64 bytes to be written simultaneously. The device is available in a small 8-pin package, saving board space. The F-RAM technology offers significant advantages over traditional EEPROM or Flash memory in terms of write speed, endurance, and power consumption. It is particularly well-suited for applications where frequent data writes are required or where data integrity is critical.