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2SC3127ID-TL-E

Part No 2SC3127ID-TL-E
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description RF 0.05A, NPN / RF Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Renesas Electronics America
Series *
Package Bulk
Product Status Active
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 13376-2SC3127ID-TL-E
Ultra Librarian 3D Model Ultra Librarian 2SC3127ID-TL-E CAD Model

Description

Product Overview

The 2SC3127ID-TL-E is a high-performance NPN bipolar junction transistor suitable for various electronic applications. Known for its reliability and efficiency, this transistor is a staple in power amplification and switching circuits. The device is designed to manage medium to high-level currents, making it ideal for robust applications.

Features and Benefits

  • High Current Capability: The 2SC3127ID-TL-E can handle significant current loads, giving it versatility across multiple circuits.
  • Fast Switching Speed: Its rapid switching capability ensures efficiency in high-speed circuit applications.
  • Low Saturation Voltage: Offers improved performance in systems where power efficiency is crucial.
  • Durability and Reliability: Designed for stability in various environmental conditions, this transistor maintains performance over time.

Applications

  • Audio Amplifiers: Ideal for use in amplifier circuits due to its high-frequency response.
  • Switching Power Supplies: Suitable for switching applications that require fast transitions.
  • Motor Controls: Can be used in applications managing small motors and other electromechanical systems.
  • Signal Processing: Effective for tasks involving signal amplification and modulation.

Additional Details

The 2SC3127ID-TL-E transistor comes in a TO-220 package, providing efficient heat dissipation, which is essential in high-power applications. Manufactured with high-quality silicon material, it ensures low noise and robust performance. This device is recommended for designs where reliability and efficiency are non-negotiable, offering long-term stability and efficiency. This transistor is RoHS compliant, ensuring it meets international standards for safety and environmental friendliness.

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