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IGLD60R190D1AUMA1

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Part No	IGLD60R190D1AUMA1
Manufacturer	Infineon Technologies
Catalog	Transistors – FETs, MOSFETs – Single
Description	GAN N-CH 600V 10A LSON-8
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Vgs(th) (Max) @ Id	1.6V @ 960µA
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-LSON-8-1
Package / Case	8-LDFN Exposed Pad
Ultra Librarian 3D Model	Ultra Librarian IGLD60R190D1AUMA1 CAD Model

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IGLD60R190D1AUMA1

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