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2SD1584-AZ(L)

Part No 2SD1584-AZ(L)
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1037324-2SD1584-AZ(L)
Categories RF Transistors(BJT)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SD1584-AZ(L) CAD Model

Description

The 2SD1584-AZ(L) is an NPN epitaxial silicon transistor manufactured by Renesas Electronics America. It is designed for high-current switching applications, making it suitable for use in power supplies, motor drivers, and other high-power control circuits. This transistor features a low saturation voltage and high current gain, contributing to efficient and reliable switching performance.

Applications:

  • Power supplies
  • Motor drivers
  • DC-DC converters
  • Relay drivers
  • Switching regulators

Features:

  • NPN epitaxial silicon transistor
  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • High collector current capability

Benefits:

  • Enables efficient switching in power supply circuits
  • Improves performance in motor control applications
  • Reduces power dissipation due to low saturation voltage
  • Provides fast and accurate switching
  • Suitable for high-power control circuits

Technical Specifications (Typical):

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 3A
  • Collector Dissipation (PC): 20W
  • DC Current Gain (hFE): 100 (Typical)
  • Saturation Voltage VCE(sat): 0.3V (at IC = 2A)

The 2SD1584-AZ(L) transistor is typically packaged in a through-hole configuration, which facilitates easy mounting and soldering onto printed circuit boards. Its high current gain ensures that a small base current can control a large collector current, making it suitable for amplification and switching applications. The low saturation voltage minimizes power dissipation, increasing efficiency and reducing heat. The fast switching speed allows for rapid response times in dynamic circuits. This transistor is designed to operate over a wide temperature range, making it suitable for both indoor and outdoor environments. Its robust construction and electrical characteristics make it a reliable component in a variety of high-power applications. It is commonly used in applications where precise and efficient control of electrical power is required.

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