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2SJ529L06-E

Name: 2SJ529L06-E
Brand: Renesas Electronics America
SKU: 1382392
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	2SJ529L06-E
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	2SJ529L06 - P-CHANNEL POWER MOSF / P-Channel 60 V 10A (Ta) 20W (Tc) Through Hole DPAK(L)-(2)
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr	Renesas Electronics America
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	20W (Tc)
Temperature Range - Operating	150°C
Mounting Type	Through Hole
Supplier Device Package	DPAK(L)-(2)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
RoHS Status	RoHS non-compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	295 pcs
Win Source Part Number	1382392-2SJ529L06-E
Ultra Librarian 3D Model	Ultra Librarian 2SJ529L06-E CAD Model

Alternative Products

Description

The 2SJ529L06-E is a P-Channel MOSFET transistor from Renesas Electronics America.

Drain to Source Voltage: 60V
Continuous Drain Current: 10A @ 25°C
Maximum On-Resistance: 160mOhm @ 5A and 10V
Gate Threshold Voltage: 2V @ 1mA
Maximum Power Dissipation: 20W
Mounting Type: Through-Hole
Package: TO-251-3 Long Leads, IPak, TO-251AB
Input Capacitance: 580pF @ 10V
Maximum Gate-Source Voltage: ±20V
Operating Temperature Range: up to 150°C
REACH Status: Unaffected by REACH regulations
Status: Obsolete
RoHS: RoHS non-compliant

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