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2SK1339-E

Part No 2SK1339-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 3A TO-3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Input Capacitance 425pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 7 Ohm @ 1.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 038929-2SK1339-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1339-E CAD Model

Description

The 2SK1339-E offers enhanced characteristics that build upon the capabilities of the famed 2SK1339 MOSFET. This N-channel MOSFET exhibits superior switching performance and energy efficiency, making it an excellent choice for contemporary electronic designs focused on power management and thermal efficiency. It continues to support high current and voltage ratings while integrating features that cater to diverse industry needs.

Features and Benefits

  • Enhanced Electrical Overstress Protection: Offers improved protection against electrical stresses, increasing component lifespan.
  • Low RDS(on): Features reduced on-state resistance, contributing to energy savings.
  • High-frequency Operation: Suitable for high-speed switching applications, enhancing throughput.
  • Environmentally Hardened: Performs reliably across a wide range of environmental conditions.

The 2SK1339-E is crafted to deliver reliable performance, even in challenging environments, thanks to its enhanced protective features. This MOSFET is well-suited to variable load applications and energy-efficient designs, supporting sustainable power architectures.

Applications/Projects

  • Solar Inverters
  • Energy Storage Systems
  • Electric Vehicle Conversion Kits
  • Power Conditioning Equipment
  • Advanced Robotics Systems

Ultimately, the 2SK1339-E stands as a testament to improved technology and innovation in MOSFET design. By offering enhanced protection and efficiency, it empowers designers and engineers to push the boundaries of power management in various demanding applications.

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