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Same model may have multiple batches, images only for reference.
CA3127M Real Image
Same model may have multiple batches, images only for reference.

CA3127M

Part No CA3127M
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description RF TRANS 5NPN 15V 1.15GHZ 16SOIC
Datasheet
CA3127M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Renesas Electronics America
Package Tube
Product Status Obsolete
Transistor Type 5 NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 1.15GHz
Noise Figure (dB Typ @ f) 3.5dB @ 100MHz
Gain 27dB ~ 30dB
Power - Max 85mW
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 6V
Current - Collector (Ic) (Max) 20mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC
Standard Package 48 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Win Source Part Number 576036-CA3127M
Ultra Librarian 3D Model Ultra Librarian CA3127M CAD Model

Description

The CA3127M is a bipolar RF transistor from Renesas Electronics America.

  • Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
  • Package Type: Surface Mount
  • Maximum Power Rating: 85mW
  • Maximum Collector-Emitter Breakdown Voltage: 15V
  • Maximum Collector Current: 20mA
  • Gain: 27dB to 30dB
  • Transistor Type: NPN
  • DC Current Gain (hFE): 35 @ 5mA and 6V
  • Frequency Transition: 1.15GHz
  • Noise Figure: 3.5dB @ 100MHz
  • Package: Tube
  • Package Quantity: 48 pieces
  • Standard Package: Tube
  • Status: Obsolete
  • Common Uses: RF amplification circuits and communication systems

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