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Same model may have multiple batches, images only for reference.
GA1L4M-T2-A Renesas Electronics America
Same model may have multiple batches, images only for reference.

GA1L4M-T2-A

Part No GA1L4M-T2-A
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single, Pre - Biased
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 95 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Base Product Number GA1L4M
Standard Package 2,664 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 807340-GA1L4M-T2-A
Ultra Librarian 3D Model Ultra Librarian GA1L4M-T2-A CAD Model

Description

The 807340-GA1L4M-T2-A is a pre-biased NPN bipolar transistor manufactured by Renesas Electronics America.

  • Maximum Power: 150 mW
  • Maximum Collector Current: 100 mA
  • Voltage Breakdown: 50 V
  • Saturation Voltage: 200mV @ Ib=250µA, Ic=5mA
  • DC Current Gain: 95 @ Ic=50mA, Vce=5V
  • Mounting: Surface Mount
  • Package: SC-70, SOT-323
  • Base Resistor: 47 kOhms
  • Emitter Base Resistor: 47 kOhms
  • Status: Obsolete

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700+ $0.1660 $116.2000
1,080+ $0.1608 $173.6640
1,485+ $0.1556 $231.0660
1,920+ $0.1505 $288.9600
2,570+ $0.1349 $346.6930
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