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Same model may have multiple batches, images only for reference.
H7N1002LSTL-E
Same model may have multiple batches, images only for reference.

H7N1002LSTL-E

Part No H7N1002LSTL-E
Manufacturer Renesas Electronics America
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 100V 75A 4LDPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 37.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 10 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LDPAK
Package / Case SC-83
Ultra Librarian 3D Model Ultra Librarian H7N1002LSTL-E CAD Model

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