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Same model may have multiple batches, images only for reference.
HAT1047RWS-E
Same model may have multiple batches, images only for reference.

HAT1047RWS-E

Part No HAT1047RWS-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 14A 8SOP / P-Channel 30 V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 10 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 873214-HAT1047RWS-E
Ultra Librarian 3D Model Ultra Librarian HAT1047RWS-E CAD Model

Description

The HAT1047RWS-E is a P-channel MOSFET transistor manufactured by Renesas Electronics America.

  • Category: FETs, MOSFETs - Single FETs, MOSFETs
  • Vdss: 30V
  • Id @ 25°C: 14A
  • Rds On @ Id, Vgs: 12mOhm @ 7A and 10V
  • Power Dissipation: 2.5W
  • Operating Temperature: Up to 150°C
  • Package: 8-SOIC
  • Mounting: Surface Mount

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