The Renesas HAT2099H-EL-E is an active N-Channel MOSFET with a maximum power dissipation of 30W (Tc). It belongs to the HAT2099H family and is categorized under Discrete Semiconductor Products.

• Popularity: High
• Supply and Demand: Sufficient
• Estimated EOL Date: 2022
• Alternative Parts: PH3230,118; PH3230; PH3230/T3; BUK7Y07-30B
• Packaging: Reel - TR
• Mounting: SMD (SMT)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Temperature Range: 150°C (TJ)
• Case / Package: LFPAK
• Dimension: SC-100, SOT-669
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current (25°C): 50A (Ta)
• Max Gate Charge: 75nC @ 10V
• Max Input Capacitance: 4750pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On (Id,Vgs): 3.7 mOhm @ 25A, 10V