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Same model may have multiple batches, images only for reference.
HAT2166H-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2166H-EL-E

Part No HAT2166H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 45A LFPAK
Datasheet
HAT2166H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 4400pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 22.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 1042357-HAT2166H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2166H-EL-E CAD Model

Description

The HAT2166H-EL-E is an N-channel MOSFET transistor manufactured by Renesas Electronics America.

  • Channel Type: N-channel
  • Maximum Power Dissipation: 25W
  • Continuous Drain Current: 45A @ 25°C
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Applications: Power supplies, motor control, and lighting
  • Operating Temperature: Up to 150°C
  • Gate-Source Threshold Voltage: 2.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.1818 $57.2726
15+ $6.7133 $100.6995
24+ $6.5035 $156.0840
32+ $6.2937 $201.3984
42+ $6.0840 $255.5280
55+ $5.4546 $300.0030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,951 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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