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IPP80N04S2-H4

Part No IPP80N04S2-H4
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 148 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874862-IPP80N04S2-H4
Ultra Librarian 3D Model Ultra Librarian IPP80N04S2-H4 CAD Model

Description

The 874862-IPP80N04S2-H4 is a CoolMOS™ N-channel MOSFET transistor.

  • Category: discrete semiconductor products
  • Vdss: 40V
  • Id: 80A @ 25°C
  • Rds On: 4mOhm @ 80A and 10V Vgs
  • Vgs(th): 4V @ 250μA Id
  • Power Dissipation: 300W @ Tc
  • Mounting Type: Through hole
  • Package/Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
  • Qg: 148nC @ 10V Vgs
  • Ciss: 4400pF @ 25V Vds
  • Product Status: Active
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.9704 $59.8520
12+ $9.8221 $117.8652
19+ $9.5149 $180.7831
26+ $9.2088 $239.4288
33+ $8.9016 $293.7528
44+ $7.9811 $351.1684
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,920 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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