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HAT2175H-EL-E Real Image1 HAT2175H-EL-E Real Image2
Same model may have multiple batches, images only for reference.
HAT2175H-EL-E Real Image1 HAT2175H-EL-E Real Image2
HAT2175H-EL-E Real Image1 HAT2175H-EL-E Real Image2
Same model may have multiple batches, images only for reference.

HAT2175H-EL-E

Part No HAT2175H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 15A 5LFPAK
Datasheet
HAT2175H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Max Gate Charge 21nC @ 10V
Max Input Capacitance 1445pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 15W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 1042360-HAT2175H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2175H-EL-E CAD Model

Description

The Renesas Electronics America MOSFET is an N-Channel power transistor that is ideal for use in various applications.

  • Power Dissipation: 15W (Tc)
  • Drive Voltage: 8V and 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 15A (Ta)
  • Maximum Rds On: 42 mOhm @ 7.5A, 10V
  • Package Dimensions: SC-100, SOT-669

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.4465 $67.2325
11+ $11.0337 $121.3707
17+ $10.6884 $181.7028
23+ $10.3442 $237.9166
29+ $9.9988 $289.9652
39+ $8.9651 $349.6389
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