The HAT2198R is an N-Channel Power MOSFET from Renesas Electronics America, designed for high-efficiency power management applications. This MOSFET is engineered to minimize on-resistance and gate charge, resulting in reduced power losses and improved system efficiency.

Applications

• DC-DC converters
• Load switching
• Power management in portable devices
• Motor control circuits

Features

• N-Channel MOSFET
• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• High-speed switching
• Surface mount package
• Pb-free lead finish; RoHS compliant

Benefits

• Increased power efficiency due to low RDS(on) and Qg
• Reduced power losses and heat generation
• Simplified thermal management
• High-speed switching capability for faster response times
• Compact size allows for space-saving designs
• Environmentally friendly due to RoHS compliance

Technical Specifications

The HAT2198R typically features a low on-resistance, which minimizes conduction losses. The gate charge is also optimized to reduce switching losses. The device is available in a surface mount package, making it suitable for automated assembly. It is designed to operate over a wide temperature range and is lead-free and RoHS compliant.

Specifically, the datasheet provides details such as:

• Drain-Source Voltage (Vds): 30V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): 15A (depending on conditions)
• On-Resistance (RDS(on)): Typically around 8 mΩ at Vgs = 10V
• Total Gate Charge (Qg): Approximately 12 nC

The HAT2198R is a reliable and efficient MOSFET suitable for a variety of power management applications. Its low on-resistance and gate charge contribute to improved system performance and energy savings.