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Same model may have multiple batches, images only for reference.
HAT2299WP-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2299WP-EL-E

Part No HAT2299WP-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH WPAK / Trans MOSFET N-CH Si 150V 14A Automotive 8-Pin WPAK EP T/R
Datasheet
HAT2299WP-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 710pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 25W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 7A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-WPAK
Package 8-PowerWDFN
Win Source Part Number 775597-HAT2299WP-EL-E
Popularity Medium
Supply and Demand Status Limited
Family Name HAT2299WP
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian HAT2299WP-EL-E CAD Model

Description

The Renesas Electronics America HAT2299WP-EL-E is a MOSFET transistor.

  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain Source Voltage: 150V
  • Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 710pF @ 25V
  • Power Dissipation (Maximum): 25W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 7A, 10V

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