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IPB020N04N G

Part No IPB020N04N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 140A TO263-7
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 95μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 9700pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 133572-IPB020N04N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB020N04N G CAD Model

Description

The Infineon Technologies IPB020N04N G is a N-channel MOSFET transistor that is designed to work in surface mount device (SMD) mounting.

  • Mounting: Surface mount device (SMD)
  • Power Dissipation (Max): 167W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current at 25°C: 140A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 95μA
  • Max Gate Charge: 120nC @ 10V
  • Maximum Rds On at Id,Vgs: 2 mOhm @ 100A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Popular in the market
  • Status: Active component
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Reel - TR
  • Case/Package: PG-TO263-7-3
  • Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2256 $66.7680
65+ $1.8262 $118.7030
100+ $1.7692 $176.9200
135+ $1.7121 $231.1335
175+ $1.6550 $289.6250
235+ $1.4839 $348.7165
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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