The HSD119KRF-E-Q is a silicon epitaxial planar diode manufactured by Renesas Electronics America. It is designed for high-speed switching applications and offers low capacitance and low forward voltage. Its small package size makes it suitable for compact electronic devices where board space is limited.

Applications

• High-speed switching circuits
• Voltage clamping
• ESD protection
• RF signal detection
• Mixer applications

Features

• Low capacitance
• Low forward voltage
• High-speed switching
• Small surface mount package
• RoHS compliant

Benefits

• Improved switching performance
• Reduced signal loss
• Enhanced protection against electrostatic discharge
• Compact design for high-density applications
• Suitability for high-frequency applications

Technical Specifications

The HSD119KRF-E-Q features a maximum reverse voltage (VR) of 80V and a forward current (IF) of 100mA. Its typical forward voltage (VF) is 0.9V at 100mA. The reverse recovery time (trr) is typically 4 ns. The total capacitance (Ct) is approximately 1.2 pF. The operating temperature range is -55°C to +150°C. It is available in a SOD-523 package. Its fast switching speed and low capacitance make it ideal for high-frequency circuits and signal processing applications. The small package allows for efficient use of board space in portable and miniaturized electronic devices.