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IDT71V3559S85BG

Part No IDT71V3559S85BG
Manufacturer Renesas Electronics America
Catalog Memory
Description IC SRAM 4.5MBIT 8.5NS 119BGA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Case / Package BGA
Interface Parallel
Max Operating Temperature 70 °C
Memory Type RAM, SRAM
Min Operating Temperature 0 °C
RoHS Non-Compliant
Win Source Part Number 1197687-IDT71V3559S85BG
Categories Memory
Manufacturer Renesas Electronics America
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IDT71V3559S85BG CAD Model

Description

The IDT71V3559S85BG is a high-speed synchronous Static RAM (SRAM) device organized as 256K x 36 bits. Manufactured by Renesas Electronics America (originally IDT), it falls under the Memory category. This SRAM is designed for high-performance applications requiring fast data access and low latency.

Applications

  • Networking equipment (routers, switches)
  • High-performance computing
  • Data acquisition systems
  • Image processing
  • Digital signal processing (DSP)

Features

  • High-speed access time: 8.5 ns
  • Synchronous operation
  • 256K x 36 bit organization
  • 3.3V power supply
  • Byte write enable
  • Burst counter
  • Available in BGA package

Benefits

  • Provides very fast data access, enhancing system performance.
  • Simplifies memory control with synchronous operation.
  • Enables efficient data storage with a large 256K x 36 bit memory array.
  • Reduces power consumption with a 3.3V power supply.
  • Allows selective data modification with byte write enable.
  • Enables fast data transfers with burst counter support.

Additional Details

The IDT71V3559S85BG utilizes advanced CMOS technology to achieve its high speed and low power characteristics. Its synchronous interface simplifies memory control and allows for seamless integration with high-performance processors and controllers. The device's byte write enable feature provides flexibility in data modification, while the burst counter enables efficient data transfers. The BGA (Ball Grid Array) package ensures excellent thermal performance and ease of surface mounting.

Technical Specifications:

  • Organization: 256K x 36
  • Access Time: 8.5 ns
  • Supply Voltage: 3.3V ± 0.3V
  • Operating Temperature: -40°C to +85°C
  • Package Type: BGA
  • Interface: Synchronous

This SRAM is suitable for systems that require fast and efficient memory access. It is commonly employed in communications, networking, and high-performance computing environments.

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