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Same model may have multiple batches, images only for reference.
NE85639-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE85639-T1-A

Part No NE85639-T1-A
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description SAME AS 2SC4093 NPN SILICON AMPL / RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-143
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Renesas
Package Tape & Reel (TR)
Product Status Last Time Buy
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 13dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V
Current - Collector (Ic) (Max) 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-253-4, TO-253AA
Supplier Device Package SOT-143
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.31.0000
Other Names 3923-NE85639-T1-ATR
Standard Package 3,000
Win Source Part Number 1082004-NE85639-T1-A
Ultra Librarian 3D Model Ultra Librarian NE85639-T1-A CAD Model

Description

The Renesas NE85639-T1-A is a bipolar transistor with a power of 200mW and a voltage collector emitter breakdown of 12V.

  • Transistor Type: Bipolar
  • Power: 200mW
  • Voltage Collector Emitter Breakdown: 12V
  • Current Collector: 100mA
  • Gain: 13dB
  • Type: NPN
  • DC current gain (hFE): 50 @ 20mA, 10V
  • Frequency transition: 7GHz
  • Noise figure: 1.1dB @ 1GHz
  • Package: Tape & reel (TR)
  • Standard Package: 3,000
  • Mounting: Surface mount technology (SMT)
  • Package/Case: TO-253-4, TO-253AA
  • ECCN: EAR99
  • Category: Discrete semiconductor products
  • REACH Status: Unaffected
  • HTSUS: 8542.31.0000
  • Alternative part number: NE85639-T1-ANE85639T1A

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