NP100P04PLG-E1-AY

Part No NP100P04PLG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 100A TO263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202412-NP100P04PLG-E1-AY
Win Source Part Number Cross
Manufacturer Renesas Electronics America Inc
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Description

The Renesas MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a P-channel transistor used in discrete semiconductor products. It is designed to control and amplify electronic signals in electronic circuits. This MOSFET has a drain-to-source voltage (Vdss) of 40V, meaning it can handle high voltage levels. It can continuously drain a current of 100A at 25°C. The Renesas MOSFET is a reliable and high-performance component that is commonly used in power electronics applications. It offers excellent switching characteristics and low on-resistance, making it suitable for high-power applications. With its compact size and efficient design, it is a popular choice among electronic designers and manufacturers.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
13+ $3.8831 $50.4803
32+ $3.1862 $101.9584
49+ $3.0866 $151.2434
67+ $2.9870 $200.1290
87+ $2.8875 $251.2125
116+ $2.5888 $300.3008
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 14,610 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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