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NP34N055SLE-E1-AY

Part No NP34N055SLE-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 34A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 5V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 17A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083322-NP34N055SLE-E1-AY
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NP34N055SLE-E1-AY CAD Model

Description

The NP34N055SLE-E1-AY is a MOSFET from Renesas Electronics America.

  • Channel Polarity: N-Channel
  • Case/Package: TO-252 (MP-3ZK)
  • Drain-Source Breakdown Voltage (Max): 55V
  • Continuous Drain Current: 34A @ 25°C
  • Rds On (Max): 18 mOhm @ 17A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4498 $58.7952
58+ $2.0109 $116.6322
89+ $1.9473 $173.3097
123+ $1.8850 $231.8550
159+ $1.8226 $289.7934
213+ $1.6332 $347.8716
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Availability: 53,100 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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