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Same model may have multiple batches, images only for reference.
NP36P04KDG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP36P04KDG-E1-AY

Part No NP36P04KDG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 36A TO-263
Datasheet
NP36P04KDG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 2800pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 56W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 18A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083327-NP36P04KDG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP36P04KDG-E1-AY CAD Model

Description

The NP36P04KDG-E1-AY is an electronic component manufactured by Renesas Electronics America.

  • Category: Discrete Semiconductor Products
  • Channel Type: P-Channel MOSFET
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 36A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Gate Charge (Max): 55nC @ 10V
  • Package: TO-263
  • Package Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: Obsolete (EOL)
  • Operating Temperature: 175°C (TJ)

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Quantity Unit Price Ext. Price
35+ $1.7799 $62.2965
80+ $1.4605 $116.8400
125+ $1.4148 $176.8500
170+ $1.3691 $232.7470
220+ $1.3236 $291.1920
295+ $1.1866 $350.0470
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