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Same model may have multiple batches, images only for reference.
NP36P06SLG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP36P06SLG-E1-AY

Part No NP36P06SLG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 36A TO-252
Datasheet
NP36P06SLG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 52nC @ 10V
Max Input Capacitance 3200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 56W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 18A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083329-NP36P06SLG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP36P06SLG-E1-AY CAD Model

Description

The MOSFET is a P-Channel power transistor that is ideal for use in various applications.

  • Manufacturer: Renesas Electronics America
  • Maximum Power Dissipation: 1.2W (Ta), 56W (Tc)
  • Drive Voltage: 4.5V and 10V
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 36A (Tc)
  • Maximum Rds On: 30 mOhm @ 18A, 10V
  • Package Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2985 $58.4325
110+ $1.0655 $117.2050
170+ $1.0321 $175.4570
235+ $0.9988 $234.7180
300+ $0.9656 $289.6800
405+ $0.8657 $350.6085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,910 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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