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Same model may have multiple batches, images only for reference.
NP60N04KUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP60N04KUG-E1-AY

Part No NP60N04KUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A TO-263
Datasheet
NP60N04KUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 5100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 6.1 mOhm @ 30A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083338-NP60N04KUG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP60N04KUG-E1-AY CAD Model

Description

The Renesas Electronics America NP60N04KUG-E1-AY is a MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.8W
  • Continuous Drain Current: 60A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Technology: SMD (SMT)
  • Supply and Demand Status: Balanced
  • RoHS Compliant: Yes

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