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Same model may have multiple batches, images only for reference.
NP89N055PUK-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP89N055PUK-E1-AY

Part No NP89N055PUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 90A TO-220
Datasheet
NP89N055PUK-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 147W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 45A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083360-NP89N055PUK-E1-AY
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NP89N055PUK-E1-AY CAD Model

Description

Renesas Electronics America's NP89N055PUK-E1-AY MOSFET is a high-performance N-channel power MOSFET that is designed to operate at a maximum power dissipation of 1.8W (Ta) and 147W (Tc).

  • Package: TO-263-3
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id, Vgs: 4 mOhm @ 45A, 10V
  • Mounting: SMD (SMT)

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Quantity Unit Price Ext. Price
30+ $2.0182 $60.5460
70+ $1.6560 $115.9200
110+ $1.6043 $176.4730
150+ $1.5526 $232.8900
195+ $1.5008 $292.6560
260+ $1.3456 $349.8560
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