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NP90N04MUK-S18-AY

Part No NP90N04MUK-S18-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO-220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 7050pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 176W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 45A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3 Full Pack
Win Source Part Number 1083365-NP90N04MUK-S18-AY
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian NP90N04MUK-S18-AY CAD Model

Description

The NP90N04MUK-S18-AY is a power MOSFET from Renesas Electronics America. This N-channel MOSFET is designed for high-efficiency power switching applications. It features a low on-state resistance and fast switching speed, making it suitable for use in DC-DC converters, motor control circuits, and other power management applications.

Applications

  • DC-DC converters
  • Motor control
  • Load switching
  • Power management systems
  • Adaptors

Features

  • Low on-state resistance (RDS(on)): Reduces conduction losses, improving efficiency.
  • High-speed switching: Minimizes switching losses, enhancing overall performance.
  • Avalanche capability: Provides robustness against voltage transients.
  • Surface mount package: Facilitates automated assembly and high-density board layouts.
  • RoHS compliant: Environmentally friendly.
  • Operating temperature: -55°C to 175°C: Suitable for a broad range of environments.

Benefits

  • Increased efficiency: Lower RDS(on) reduces power dissipation, resulting in improved energy efficiency.
  • Reduced heat generation: Lower power losses translate into less heat, enhancing system reliability.
  • Smaller footprint: Surface mount package allows for more compact designs.
  • Improved system reliability: Robust design and avalanche capability ensure reliable operation under various conditions.
  • Simplified design: Easy to drive and integrate into existing circuits.

Additional Details

The NP90N04MUK-S18-AY has a drain-source voltage (VDSS) of 40V and a continuous drain current (ID) of up to 90A (depending on operating conditions). The gate-source voltage (VGS) is typically ±20V. The device is packaged in a small surface-mount package, suitable for automated assembly. Its low gate charge contributes to its fast switching performance, making it suitable for high-frequency power conversion applications. The MOSFET's avalanche capability provides an added layer of protection against voltage spikes, enhancing system reliability. It is designed to operate over a wide temperature range, making it suitable for a variety of industrial and commercial applications.

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