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NP90N055VUK-E1-AY

Part No NP90N055VUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 90A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 147W (Tc)
Maximum Rds On at Id,Vgs 3.85 mOhm @ 45A, 5V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083368-NP90N055VUK-E1-AY
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian NP90N055VUK-E1-AY CAD Model

Description

The Renesas Electronics America 1083368-NP90N055VUK-E1-AY is an N-channel MOSFET with a maximum power dissipation of 1.2W (Ta) and 147W (Tc).

  • Type: N-Channel MOSFET
  • Maximum Power Dissipation: 1.2W (Ta) and 147W (Tc)
  • Drive Voltage: 10V
  • Maximum Rds On @ Id, Vgs: 3.85 mOhm @ 45A, 5V
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Temperature Range: 175 degrees Celsius (TJ)
  • Popularity: Medium
  • Quantity per Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5837 $63.3480
90+ $1.2995 $116.9550
140+ $1.2590 $176.2600
190+ $1.2183 $231.4770
250+ $1.1778 $294.4500
330+ $1.0559 $348.4470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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