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Same model may have multiple batches, images only for reference.
RJH1CF5RDPQ-80#T2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH1CF5RDPQ-80#T2

Part No RJH1CF5RDPQ-80#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 1200V 50A 192.3W TO247
Datasheet
RJH1CF5RDPQ-80#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 25A
Maximum Power Dissipation 192.3W
Input Type Standard
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1092256-RJH1CF5RDPQ-80#T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RJH1CF5RDPQ-80#T2 CAD Model

Description

The Renesas Electronics America RJH1CF5RDPQ-80#T2 is a through-hole IGBT transistor with a maximum collector current of 50A and maximum collector-emitter breakdown voltage of 1200V.

  • Maximum Power Dissipation: 192.3W
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V and 25A
  • Discrete Semiconductor Product Type: IGBT Transistor
  • Temperature Range: Up to 150°C
  • Case/Package: TO-247
  • Packaging: Tube/Rail

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