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Same model may have multiple batches, images only for reference.
RJH60F6DPK-00#T0 Real Image
Same model may have multiple batches, images only for reference.

RJH60F6DPK-00#T0

Part No RJH60F6DPK-00#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 85A 297.6W TO-3P / IGBT Trench 600 V 85 A 297.6 W Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Renesas Electronics America
Package Tube
Product Status Active
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 85 A
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 45A
Power - Max 297.6 W
Input Type Standard
Td (on/off) @ 25°C 58ns/131ns
Test Condition 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-3P
Base Product Number RJH60F6
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891750-RJH60F6DPK-00#T0
Ultra Librarian 3D Model Ultra Librarian RJH60F6DPK-00#T0 CAD Model

Description

The RJH60F6DPK-00#T0 is a single IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications.

  • Category: Discrete semiconductor products
  • Status: Active
  • Manufacturer: Renesas Electronics America
  • Maximum Power Rating: 297.6 W
  • Collector-Emitter Breakdown Voltage: 600 V
  • Mounting Type: Through-hole
  • Package/Case Type: TO-220-3 Full Pack

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